شبیه سازی مونت کارلو از خواص ترابرد الکتریکی alxga1-xn و inxga1-xn تحت تاثیر میدان الکتریکی شدید با x=0/2 و x=0/8
پایان نامه
- دانشگاه تربیت معلم - سبزوار - دانشکده علوم پایه
- نویسنده مینو دسترس
- استاد راهنما هادی عربشاهی شعبان رضا قربانی
- تعداد صفحات: ۱۵ صفحه ی اول
- سال انتشار 1386
چکیده
چکیده ندارد.
منابع مشابه
Doping of AlxGa1−xN alloys
We have investigated the doping of AlxGa1-xN alloys on the basis of density–functional–pseudopotential calculations for native point defects and dopant impurities. We have identified two possible causes for the experimentally observed decrease in n-type conductivity for x\0.4: (1) in the case of doping with oxygen, a DX transition that converts the shallow donor into a deep level; and (2) compe...
متن کاملCompositional Modulation in InxGa1-xN
Transmission Electron Microscopy and x-ray diffraction were used to study compositional modulation in InxGa1-x N layers grown with compositions close to the miscibility gap. The samples (0.34 < x < 0.8) were deposited by molecular beam epitaxy using either a 200-nm-thick AlN or GaN buffer layer grown on a sapphire substrate. In the TEM imaging mode this modulation is seen as black/white fringes...
متن کاملRadiation-induced alloy rearrangement in InxGa1−xN
Powered by TCPDF (www.tcpdf.org) This material is protected by copyright and other intellectual property rights, and duplication or sale of all or part of any of the repository collections is not permitted, except that material may be duplicated by you for your research use or educational purposes in electronic or print form. You must obtain permission for any other use. Electronic or print cop...
متن کاملStudy of High Indium InXGa1-XN Alloys with Synchrotron Radiation
InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapphire (0001) by molecular beam epitaxy (MBE). X-ray absorption fine structure have been used to study the local structure of some typical InxGa1-xN alloys with high indium (In) composition of x=0.78 and 0.86. A detailed analysis of the extended x-ray absorption fine structure of In K-edge by using ...
متن کاملOrigin of background electron concentration in InxGa1−xN alloys
The origin of high background electron concentration (n) in InxGa1−xN alloys has been investigated. A shallow donor was identified as having an energy level (ED1) that decreases with x (ED1 = 16 meV at x = 0 and ED1 = 0 eV at x ∼ 0.5) and that crossover the conduction band at x ∼ 0.5. This shallow donor is believed to be the most probable cause of high n in InGaN. This understanding is consiste...
متن کاملPeriodicity and convergence for xn + 1 = | xn − xn − 1 |
Each solution {xn} of the equation in the title is either eventually periodic with period 3 or else, it converges to zero—which case occurs depends on whether the ratio of the initial values of {xn} is rational or irrational. Further, the sequence of ratios {xn/xn−1} satisfies a first-order difference equation that has periodic orbits of all integer periods except 3. p-cycles for each p = 3 are...
متن کاملمنابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ذخیره در منابع من قبلا به منابع من ذحیره شده{@ msg_add @}
نوع سند: پایان نامه
دانشگاه تربیت معلم - سبزوار - دانشکده علوم پایه
میزبانی شده توسط پلتفرم ابری doprax.com
copyright © 2015-2023